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Pulsed laser deposition of thin films

Properties of ion-assisted pulsed laser deposited h-BN/c-BN layer systems


S. WEISSMANTEL, G. REISSE: PRESENTED AT 3RD INT. CONF. ON PHOTO-EXCITED PROCESSES AND APPLICATIONS, JUNE 2-5 1999, STRASBOURG, FRANCE, APPLIED SURFACE SCIENCE 154-155 (2000) 428.



Abstract:

Boron nitride films were prepared by pulsed laser ablation from a boron nitride target using a KrF-excimer laser, where the growing films were deposited in nitrogen atmosphere or bombarded by a nitrogen/argon ion beam. Films deposited at ion-to-arriving-target-atom (I/A) ratios at the substrate below 0.5 (l-BN) are hexagonal. Nucleation of the cubic phase (c-BN) takes place exclusively with ion bombardment at I/A ratios above 1.0, which may be reduced down to 0.6 after the completion of the nucleation process. The adhesion of c-BN films is improved significantly by using l-BN films as intermediate layers. Up to 400 nm thick c-BN films have been investigated by cross-section transmission electron microscopy. The l-BN layers show a strong preferred orientation with the c-axis parallel to the substrate surface. The crystallites of the nearly phase pure c-BN layers show strong <110> preferred orientation. The Vickers microhardness of l-BN films is in the range of 25 to 5 GPa and the compressive stresses in the range of 2 to 16 GPa. The compressive stresses of 400 nm thick c-BN films were in the range of 4 to 6 GPa.



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Erstellt: 07.02.2012 15:48:24 | Letzte Änderung: 01.02.2002 17:22:09
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